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september 2011 doc id 15331 rev 3 1/22 22 stb30n65m5, stf30n65m5, STI30N65M5 stp30n65m5, stw30n65m5 n-channel 650 v, 0.125 , 22 a, mdmesh? v power mosfet d2pak, to-220fp, i2pak, to-220, to-247 features worldwide best r ds(on) *area higher v dss rating excellent switching performance easy to drive 100% avalanche tested high dv/dt capability applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroe lectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order codes v dss @ t jmax r ds(on) max. i d stb30n65m5 stf30n65m5 STI30N65M5 stp30n65m5 stw30n65m5 710 v 710 v 710 v 710 v 710 v < 0.139 < 0.139 < 0.139 < 0.139 < 0.139 22 a 22 a (1) 22 a 22 a 22 a 1. limited only by maximum temperature allowed 1 3 1 2 3 1 2 3 1 2 3 1 2 3 to-220 to-220fp d2pak i2pak to-247 !-v $ ' 3 table 1. device summary order codes marking package packaging stb30n65m5 stf30n65m5 STI30N65M5 stp30n65m5 stw30n65m5 30n65m5 30n65m5 30n65m5 30n65m5 30n65m5 d2pak to-220fp i2pak to-220 to-247 tape and reel tu b e tu b e tu b e tu b e www.st.com
contents stb/f/i/p/w30n65m5 2/22 doc id 15331 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
stb/f/i/p/w30n65m5 electrical ratings doc id 15331 rev 3 3/22 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, d2pak to-247, i2pak to-220fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 22 22 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 13 13 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 88 88 (1) a p tot total dissipation at t c = 25 c 140 30 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 7a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 500 mj dv/dt (3) 3. i sd 21 a, di/dt = 400 a/s, v peak < v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d2pak to-220fp i2pak to-220 to-247 r thj-case thermal resistance junction- case max 0.83 3.6 0.83 c/w r thj-amb thermal resistance junction- ambient max 62.5 50 c/w r thj-pcb thermal resistance junction-pcb max 30 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics stb/f/i/p/w30n65m5 4/22 doc id 15331 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 11 a 0.125 0.139 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 2880 68 5 - pf pf pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 520 v - 190 - pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related v gs = 0, v ds = 0 to 520 v - 65 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.6 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 11 a, v gs = 10 v (see figure 20 ) - 64 16 25 - nc nc nc
stb/f/i/p/w30n65m5 electrical characteristics doc id 15331 rev 3 5/22 table 6. switching times symbol parameter test conditions min. typ. max unit t d(off) t r t c t f turn-off delay time rise time cross time fall time v dd = 400 v, i d = 14 a, r g = 4.7 , v gs = 10 v (see figure 21 ) - 50 8 20 10 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 22 88 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 22 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22 a, di/dt = 100 a/s v dd = 60 v (see figure 21 ) - 336 6 32 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 21 ) - 395 7 34 ns c a
electrical characteristics stb/f/i/p/w30n65m5 6/22 doc id 15331 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220, d2pak, i2pak figure 3. thermal impedance for to-220, d 2 pa k , i 2pa k figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am05462v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 0.01 am0546 3 v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 0.01 am05464v1
stb/f/i/p/w30n65m5 electrical characteristics doc id 15331 rev 3 7/22 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 20 10 0 0 10 v d s (v) 20 (a) 5 15 25 3 5 5v 6v 7v v g s =10v 3 0 25 15 5 3 0 40 45 am05465v1 i d 15 10 5 0 0 4 v g s (v) 8 (a) 2 6 10 20 3 5 3 0 25 40 45 v d s =15v am05466v1 v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =520v i d =11a 50 12 240 160 8 0 0 3 20 400 v d s v g s 4 8 0 60 70 am05471v1 r d s (on) 0.11 0.10 0.09 0.0 8 0 20 i d (a) ( ) 10 25 0.12 0.1 3 0.14 15 5 am0546 8 v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am05469v1 e o ss 6 4 2 0 0 100 v d s (v) ( j) 400 8 200 3 00 10 12 500 600 am05470v1
electrical characteristics stb/f/i/p/w30n65m5 8/22 doc id 15331 rev 3 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. switching losses vs gate resistance (1) 1. eon including reverse re covery of a sic diode v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 am0547 3 v1 r d s (on) 1.7 1.5 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1. 3 1.9 2.1 am05474v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05475v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 125 1.05 1.07 am05467v1 e 150 100 50 0 0 20 r g ( ) ( j) 10 3 0 200 250 3 00 40 i d =14a v cl =400v v g s =10v eon eoff am05472v1
stb/f/i/p/w30n65m5 test circuits doc id 15331 rev 3 9/22 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive wavefor m figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v2 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off
package mechanical data stb/f/i/p/w30n65m5 10/22 doc id 15331 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopackm is an st trademark.
stb/f/i/p/w30n65m5 package mechanical data doc id 15331 rev 3 11/22 table 8. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb/f/i/p/w30n65m5 12/22 doc id 15331 rev 3 figure 25. d2pak (to-263) drawing figure 26. d2pak footprint (a) a. all dimensions are in millimeters 0079457_ s 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
stb/f/i/p/w30n65m5 package mechanical data doc id 15331 rev 3 13/22 figure 27. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data stb/f/i/p/w30n65m5 14/22 doc id 15331 rev 3 figure 28. i2pak (to-262) drawing table 10. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e 10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40 00049 8 2_rev_h
stb/f/i/p/w30n65m5 package mechanical data doc id 15331 rev 3 15/22 table 11. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
package mechanical data stb/f/i/p/w30n65m5 16/22 doc id 15331 rev 3 figure 29. to-220 type a drawing 00159 88 _typea_rev_ s
stb/f/i/p/w30n65m5 package mechanical data doc id 15331 rev 3 17/22 table 12. to-247 mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e5.45 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s5.50
package mechanical data stb/f/i/p/w30n65m5 18/22 doc id 15331 rev 3 figure 30. to-247 drawing 0075 3 25_f
stb/f/i/p/w30n65m5 packaging mechanical data doc id 15331 rev 3 19/22 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging mechanical data stb/f/i/p/w30n65m5 20/22 doc id 15331 rev 3 figure 31. tape figure 32. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
stb/f/i/p/w30n65m5 revision history doc id 15331 rev 3 21/22 6 revision history table 14. document revision history date revision changes 16-jan-2009 1 first release 21-sep-2009 2 document status promoted from preliminary data to datasheet. 22-sep-2011 3 c o(er) and c o(tr) values changed in ta bl e 5 : d y n a m i c table 6: switching times parameters updates figure 24: switching time waveform has been corrected minor text changes section 4: package mechanical data has been modified. added: ? table 8: d2pak (to-263) mechanical data , figure 25: d2pak (to- 263) drawing and figure 26: d2pak footprint ; ? table 9: to-220fp mechanical data ,and figure 27: to-220fp drawing ; ? table 10: i2pak (to-262) mechanical data ,and figure 28: i2pak (to-262) drawing ; ? table 11: to-220 type a mechanical data ,and figure 29: to-220 type a drawing ; ? table 12: to-247 mechanical data ,and figure 30: to-247 drawing ; section 5: packaging mechanical data has been modified. added: ? table 13: d2pak (to-263) tape and reel mechanical data , figure 31: tape and figure 32: reel ;
stb/f/i/p/w30n65m5 22/22 doc id 15331 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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